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 STD5N20L
N-CHANNEL 200V - 0.65 - 5A DPAK STripFETTM MOSFET
Table 1: General Features
TYPE STD5N20L
s s s s
Figure 1: Package
ID 5A Pw 33 W
VDSS 200 V
RDS(on) < 0.7
TYPICAL RDS(on) = 0.65 @ 5V CONDUCTION LOSSES REDUCED LOW INPUT CAPACIATNCE LOW THRESHOLD DEVICE
1
DPAK
3
DESCRIPTION The STD5N20L utilizes the latest advanced design rules of ST's proprietary STripFETTM technology. This is suitable for the most demanding DC Motor Control and lighting application.
Figure 2: Internal Schematic Diagram APPLICATIONS s UPS AND MOTOR CONTROL s LIGHTING
Table 2: Order Codes
SALES TYPE STD5N20LT4 MARKING D5N20L PACKAGE DPAK PACKAGING TAPE & REEL
Rev. 3 September 2004
NEW DATASHEET ACCORDING TO PCN DSG-TRA/04/532
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Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Storage Temperature Operating Junction Temperature Value 200 200 20 5 3.6 20 33 0.27 -55 to 150 Unit V V V A A A W W/C C
( ) Pulse width limited by safe operating area
Table 4: Thermal Data
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 3.75 100 275 C/W C/W C
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 A, VGS = 0 Min. 200 1 10 100 1 0.65 2.5 0.7 Typ. Max. Unit V A A nA V
VDS = Max Rating Zero Gate Voltage Drain Current (VGS = 0) VDS= Max Rating, TC= 125C Gate-body Leakage Current (VDS = 0) Static Drain-source On Resistance VGS = 20V
Gate Threshold Voltage VDS = VGS, ID = 50A VGS = 5 V, ID = 2.5 A
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Table 6: Dynamic
Symbol gfs (2) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 6.5 242 44 6 11.5 21.5 14 15.5 5 1.5 3 6 Max. Unit S pF pF pF ns ns ns ns nC nC nC
VDD = 100 V, ID = 2.5 A RG = 4.7, VGS = 5V (Resistive Load see Figure 14) VDD = 160 V, ID = 5 A, VGS = 5V
Table 7: Source Drain Diode
Symbol ISD ISDM (*) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, VGS = 0 ISD = 5 A, di/dt = 100 A/s, VDD = 100 V, Tj = 25C (see test circuit, see Figure 15) ISD = 5 A, di/dt = 100 A/s, VDD = 100 V, Tj = 150C (see test circuit, see Figure 15) 93 237 5.1 97 286 5.9 Test Conditions Min. Typ. Max. 5 20 1.5 Unit A A V ns nC A ns nC A
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (2) Starting Tj =25 C, Id = 5 A, VDD = 50 V (*) Pulse width limited by safe operating area
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Figure 3: Safe Operating Area Figure 6: Thermal Impedance
Figure 4: Output Characteristics
Figure 7: Transfer Characteristics
Figure 5: Transconductance
Figure 8: Static Drain-source On Resistance
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Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Voltage vs Temperature
Figure 13: Normalized On Resistance vs Temperature
Figure 11: Source-Drain Diode Forward Characteristics
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Figure 14: Switching Times Test Circuit For Resistive Load Figure 16: Gate Charge Test Circuit
Figure 15: Test Circuit For Inductive Load Switching and Diode Recovery Times
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TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0
o
DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35
inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8
o
TYP.
TYP.
MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
0.8 0.024 0
o
0.039 0o
P032P_B
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DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R
W
BASE QTY 2500
mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40
15.7 16.3
inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574
0.618 0.641
MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1
* on sales type
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Table 8: Revision History
Date 08-June-2004 20-Sep-2004 Revision 2 3 Description of Changes New Stylesheet. Datasheet according to PCN DSG-TRA/04/532 Changes on Table 3, and on Figure 3.
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
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